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shanghai special sun electronic technology
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BRIDGE DIODE
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11
bridge diode db107(df10)
Specification: DB107(DF10)
Detail: DB bridge diode,IF=1A/1.5A IFSM=50A IR=10UA VR=50-1000V VF=1.1V GPP CHIP two kinds of package:DB DBS
12
bridge diode mb6s
Specification: MB6S(B6S)
Detail: mini dip bridge diode IF=0.5A IFSM=30A IR=5UA VR=50-1000V VF=1.1V GPP CHIP
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